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| 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet FEATURES: * Organized as 512K x16 * Single Voltage Read and Write Operations - 1.65-1.95V * Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption (typical values at 5 MHz) - Active Current: 5 mA (typical) - Standby Current: 5 A (typical) * Sector-Erase Capability - Uniform 2 KWord sectors * Block-Erase Capability - Uniform 32 KWord blocks * Fast Read Access Time - 70 ns * Latched Address and Data * Fast Erase and Word-Program - Sector-Erase Time: 36 ms (typical) - Block-Erase Time: 36 ms (typical) - Chip-Erase Time: 140 ms (typical) - Word-Program Time: 28 s (typical) * Automatic Write Timing - Internal VPP Generation * End-of-Write Detection - Toggle Bit - Data# Polling * CMOS I/O Compatibility * JEDEC Standard - Flash EEPROM Pinouts and command sets * Packages Available - 48-ball TFBGA (6mm x 8mm) - 48-ball WFBGA (5mm x 6mm) Micro-Package - 48-ball XFLGA (5mm x 6mm) Micro-Package * All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST39WF800B is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared to alternate approaches. The SST39WF800B writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. The SST39WF800B features high-performance Word-Programming which provides a typical Word-Program time of 28 sec. It uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. On-chip hardware and software data protection schemes protects against inadvertent writes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39WF800B is offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39WF800B is suited for applications that require convenient and economical updating of program, configuration, or data memory. It significantly improves performance and reliability of all system applications while lowering power consumption. It inherently uses less energy (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 1 during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. For any given voltage range, SuperFlash technology uses less current to program and has a shorter erase time; therefore, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. SuperFlash technology provides fixed Erase and Program times independent of the number of Erase/Program cycles that have occurred. Consequently, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet surface mount requirements, the SST39WF800B is offered in a 48-ball TFBGA package and a 48-ball MicroPackage. See Figure 3 and Figure 2 for pin assignments. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet Device Operation Commands, which are used to initiate the memory operation functions of the device, are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Sector-/Block-Erase Operation The SST39WF800B offers both Sector-Erase and BlockErase modes which allow the system to erase the device on a sector-by-sector, or block-by-block, basis. The sector architecture is based on uniform sector size of 2 KWord. Initiate the Sector-Erase operation by executing a six-byte command sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The Block-Erase mode is based on uniform block size of 32 KWord. Initiate the Block-Erase operation by executing a six-byte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 9 and 10 for timing waveforms. Any commands issued during the Sector- or Block-Erase operation are ignored. Read The Read operation of the SST39WF800B is controlled by CE# and OE#; both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. See Figure 4. Word-Program Operation The SST39WF800B is programmed on a word-by-word basis. The sector where the word exists must be fully erased before programming. Programming is accomplished in three steps: 1. Load the three-byte sequence for Software Data Protection. 2. Load word address and word data. During the Word-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. 3. Initiate the internal Program operation after the rising edge of the fourth WE# or CE#, whichever occurs first. Once initiated, the Program operation will be completed within 40 s. See Figures 5 and 6 for WE# and CE# controlled Program operation timing diagrams and Figure 16 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands issued during the internal Program operation are ignored. Chip-Erase Operation The SST39WF800B provides a Chip-Erase operation, which allows the user to erase the entire memory array to the `1' state. This is useful when the entire device must be quickly erased. Initiate the Chip-Erase operation by executing a six-byte command sequence with Chip-Erase command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 8 for the timing diagram, and Figure 19 for the flowchart. Any commands issued during the Chip-Erase operation are ignored. (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 2 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet Write Operation Status Detection To optimize the system write cycle time, the SST39WF800B provides two software means to detect the completion of a Program or Erase write cycle. The software detection includes two status bits--Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the internal Program or Erase operation. The completion of the nonvolatile Write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may occur simultaneously with the completion of the Write cycle. If this occurs, the system may get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. To prevent spurious rejection in the event of an erroneous result, the software routine must include a loop to read the accessed location an additional two (2) times. If both Reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-, Blockor Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 0-1 for Toggle Bit timing diagram and Figure 17 for a flowchart. Data Protection The SST39WF800B provides both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.0V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Data# Polling (DQ7) When the SST39WF800B is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is complete, DQ7 will produce true data. Although DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid. Valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 s. During an internal Erase operation, any attempt to read DQ7 will produce a `0'. Once the internal Erase operation is complete, DQ7 will produce a `1'. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-, Block-, or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 7 for Data# Polling timing diagram and Figure 17 for a flowchart. Software Data Protection (SDP) The SST39WF800B provides the JEDEC approved Software Data Protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of the three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte sequence. This group of devices are shipped with the Software Data Protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to Read mode within TRC. The contents of DQ15DQ8 can be VIL or VIH, but no other value, during any SDP command sequence. Common Flash Memory Interface (CFI) The SST39WF800A contains the CFI information that describes the characteristics of the device, and supports both the original SST CFI Query mode implementation for compatibility with existing SST devices, as well as the general CFI Query mode. To enter the SST CFI Query mode, the system must write the three-byte sequence, same as the Product ID Entry command, with 98H (CFI Query command) to address 5555H in the last byte sequence. Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating `1's and `0's, i.e., toggling between `1' and `0'. When the Program or Erase operation is complete, the DQ6 bit will stop toggling and the device is ready for the next operation. (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 3 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet To enter the general CFI Query mode, the system must write a one-byte sequence using the Entry command with 98H to address 55H. Once the device enters the CFI Query mode, the system can read CFI data at the addresses given in Tables 5 through 7. The system must write the CFI Exit command to return to Read mode from the CFI Query mode. Product Identification Mode Exit/ CFI Mode Exit To return to the standard Read mode, exit the Software Product Identification mode. Issue the Software ID Exit command sequence which returns the device to the Read mode. The Software ID Exit command may also be used to reset the device to the Read mode after any inadvertent transient condition that causes the device to behave abnormally, e.g., not read correctly. The Software ID Exit/CFI Exit command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 13 for timing waveform, and Figure 18 for a flowchart. Product Identification The Product Identification mode identifies the device as the SST39WF800B and manufacturer as SST. This mode is accessed by software operations. Use Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Table 4 for software operation, Figure 11 for the Software ID Entry and Read timing diagram, and Figure 18 for the Software ID Entry command sequence flowchart. TABLE 1: Product Identification Table Address Manufacturer's ID Device ID SST39WF800B 0001H 273EH T1.0 1344 Data 00BFH 0000H (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 4 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet X-Decoder SuperFlash Memory Memory Address Address Buffer & Latches Y-Decoder CE# OE# WE# DQ15 - DQ0 1344 B1.0 Control Logic I/O Buffers and Data Latches FIGURE 1: Functional Block Diagram TOP VIEW (balls facing down) SST39WF800B 6 A2 A4 A3 A5 A6 A7 A18 A17 NC NC NC WE# NC NC A9 A10 A8 A11 A13 A12 A14 A15 5 A1 4 A0 3 CE# DQ8 DQ10 OE# DQ9 NC NC DQ4 DQ11 A16 DQ5 DQ6 DQ7 2 VSS 1 DQ0 DQ1 DQ2 DQ3 VDD DQ12 DQ13 DQ14 DQ15 VSS A B C D E F G H J K L 1344 48-wfbga M2Q P02.0 FIGURE 2: Pin Assignments for 48-Ball WFBGA and 48-Ball XFLGA (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 5 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet TOP VIEW (balls facing down) SST39WF800B 6 A13 A12 A14 A15 A16 A8 NC NC A17 A4 5 A9 NC DQ15 VSS A10 A11 DQ7 DQ14 DQ13 DQ6 NC A18 A6 A2 NC DQ5 DQ12 VDD DQ4 NC DQ2 DQ10 DQ11 DQ3 A5 A1 DQ0 DQ8 DQ9 DQ1 A0 CE# OE# VSS 4 WE# 3 NC 2 A7 1 A3 A B C D E F G H 1344 48-tfbga P01.0 FIGURE 3: Pin Assignments for 48-ball TFBGA TABLE 2: Pin Description Symbol AMS1-A0 DQ15-DQ0 Pin Name Address Inputs Data Input/output Functions To provide memory addresses. During Sector-Erase AMS-A11 address lines will select the sector. During Block-Erase AMS-A15 address lines will select the block. To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the Write operations. To provide power supply voltage: Unconnected pins. T2.0 1344 CE# OE# WE# VDD VSS NC Chip Enable Output Enable Write Enable Power Supply Ground No Connection 1.65-1.95V for SST39WF800B 1. AMS = Most significant address AMS = A18 for SST39WF800B TABLE 3: Operation Modes Selection Mode Read Program Erase Standby Write Inhibit Product Identification Software Mode VIL VIL VIH See Table 4 T3.0 1344 CE# VIL VIL VIL VIH X X OE# VIL VIH VIH X VIL X WE# VIH VIL VIL X X VIH DQ DOUT DIN X1 High Z High Z/ DOUT High Z/ DOUT Address AIN AIN Sector or Block address, XXH for Chip-Erase X X X 1. X can be VIL or VIH, but no other value. (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 6 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet TABLE 4: Software Command Sequence Command Sequence Word-Program Sector-Erase Block-Erase Chip-Erase SST CFI Query Entry5 General CFI Query Mode Software ID Exit7/ CFI Exit Software ID Exit7/ CFI Exit 1st Bus Write Cycle Addr1 5555H 5555H 5555H 5555H 5555H 55H XXH 5555H Data2 AAH AAH AAH AAH AAH AAH 98H F0H AAH 2AAAH 55H 5555H F0H T4.0 1344 2nd Bus Write Cycle Addr1 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH Data2 55H 55H 55H 55H 55H 55H 3rd Bus Write Cycle Addr1 5555H 5555H 5555H 5555H 5555H 5555H Data2 A0H 80H 80H 80H 90H 98H 4th Bus Write Cycle Addr1 WA3 5555H 5555H 5555H Data2 Data AAH AAH AAH 5th Bus Write Cycle Addr1 2AAAH 2AAAH 2AAAH Data2 55H 55H 55H 6th Bus Write Cycle Addr1 SAX4 BAX4 5555H Data2 30H 50H 10H Software ID Entry5,6 5555H 1. Address format A14-A0 (Hex), Addresses AMS-A15 can be VIL or VIH, but no other value, for the Command sequence. AMS = Most significant address AMS = A18 for SST39WF800B 2. DQ15-DQ8 can be VIL or VIH, but no other value, for the Command sequence 3. WA = Program word address 4. SAX for Sector-Erase; uses AMS-A11 address lines BAX for Block-Erase; uses AMS-A15 address lines 5. The device does not remain in Software Product ID mode if powered down. 6. With AMS-A1 = 0; SST Manufacturer's ID = 00BFH, is read with A0 = 0, SST39WF800B Device ID = 273EH, is read with A0 = 1. 7. Both Software ID Exit operations are equivalent TABLE 5: CFI Query Identification String1 for SST39WF800B Address 10H 11H 12H 13H 14H 15H 16H 17H 18H 19H 1AH Data 0051H 0052H 0059H 0001H 0007H 0000H 0000H 0000H 0000H 0000H 0000H Data Query Unique ASCII string "QRY" Primary OEM command set Address for Primary Extended Table Alternate OEM command set (00H = none exists) Address for Alternate OEM extended Table (00H = none exits) T5.0 1344 1. Refer to CFI publication 100 for more details. (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 7 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet TABLE 6: System Interface Information for SST39WF800B Address 1BH 1CH 1DH 1EH 1FH 20H 21H 22H 23H 24H 25H 26H Data 0016H 0020H 0000H 0000H 0005H 0000H 0005H 0007H 0001H 0000H 0001H 0001H Data VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts VPP min (00H = no VPP pin) VPP max (00H = no VPP pin) Typical time out for Word-Program 2N s (25 = 32 s) Typical time out for min size buffer program 2N s (00H = not supported) Typical time out for individual Sector/Block-Erase 2N ms (25 = 32 ms) Typical time out for Chip-Erase 2N ms (27 = 128 ms) Maximum time out for Word-Program 2N times typical (21 x 25 = 64 s) Maximum time out for buffer program 2N times typical Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 25 = 64 ms) Maximum time out for Chip-Erase 2N times typical (21 x 27 = 256 ms) T6.0 1344 TABLE 7: Device Geometry Information for SST39WF800B Address 27H 28H 29H 2AH 2BH 2CH 2DH 2EH 2FH 30H 31H 32H 33H 34H Data 0014H 0001H 0000H 0000H 0000H 0002H 00FFH 0000H 0010H 0000H 000FH 0000H 0000H 0001H Data Device size = 2N Byte (14H = 20; 220 = 1 MByte) Flash Device Interface description; 0001H = x16-only asynchronous interface Maximum number of byte in multi-byte write = 2N (00H = not supported) Number of Erase Sector/Block sizes supported by device Sector Information (y + 1 = Number of sectors; z x 256B = sector size) y = 255 + 1 = 256 sectors (00FFH = 255) z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) Block Information (y + 1 = Number of blocks; z x 256B = block size) y = 15 + 1 = 16 blocks (000FH = 15) z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T7.0 1344 (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 8 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 11V Package Power Dissipation Capability (TA = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA 1. Excluding certain with-Pb 32-PLCC units, all packages are 260C capable in both non-Pb and with-Pb solder versions. Certain with-Pb 32-PLCC package types are capable of 240C for 10 seconds; please consult the factory for the latest information. 2. Outputs shorted for no more than one second. No more than one output shorted at a time. Operating Range Range Commercial Industrial Ambient Temp 0C to +70C -40C to +85C VDD 1.65-1.95V 1.65-1.95V AC Conditions of Test Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF See Figures 14 and 15 (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 9 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet TABLE 8: DC Operating Characteristics, VDD = 1.65-1.95V1 Limits Symbol IDD Parameter Power Supply Current Read Program and Erase ISB ILI ILO VIL VIH VOL VOH Standby VDD Current2 Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VDD-0.1 0.8VDD 0.1 15 20 40 1 1 0.2VDD V V V mA mA A A A Min Max Units Test Conditions Address input=VILT/VIHT, at f=5 MHz, VDD=VDD Max CE#=VIL, OE#=WE#=VIH, all I/Os open CE#=WE#=VIL, OE#=VIH CE#=VDD, VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max IOL=100 A, VDD=VDD Min IOH=-100 A, VDD=VDD Min T8.0 1344 1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25C (room temperature), and VDD = 1.8V. Not 100% tested. 2. 40 A is the maximum ISB for all SST39WF800B commercial grade devices. 40 A is the maximum ISB for all 39WF800A industrial grade devices. For all SST39WF800B commercial and industrial devices, ISB typical is under 5 A. TABLE 9: Recommended System Power-up Timings Symbol TPU-READ 1 Parameter Power-up to Read Operation Power-up to Program/Erase Operation Minimum 100 100 Units s s T9.0 1344 TPU-WRITE1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 10: Capacitance (TA = 25C, f=1 MHz, other pins open) Parameter CI/O 1 Description I/O Pin Capacitance Input Capacitance Test Condition VI/O = 0V VIN = 0V Maximum 12 pF 6 pF T10.0 1344 CIN1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 11: Reliability Characteristics Symbol NEND1,2 TDR1 ILTH1 Parameter Endurance Data Retention Latch Up Minimum Specification 10,000 100 100 + IDD Units Cycles Years mA Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78 T11.0 1344 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a higher minimum specification. (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 10 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet AC CHARACTERISTICS TABLE 12: Read Cycle Timing Parameters 70 ns Symbol TRC TCE TAA TOE TCLZ1 TOLZ1 TCHZ1 TOHZ1 TOH1 Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE# Low to Active Output OE# Low to Active Output CE# High to High-Z Output OE# High to High-Z Output Output Hold from Address Change 0 0 0 40 40 Min 70 70 70 35 Max Units ns ns ns ns ns ns ns ns ns T12.0 1344 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 13: Program/Erase Cycle Timing Parameters Symbol TBP TAS TAH TCS TCH TOES TOEH TCP TWP TWPH1 TCPH1 TDS TDH1 TIDA TSE TBE TSCE 1 Parameter Word-Program Time Address Setup Time Address Hold Time WE# and CE# Setup Time WE# and CE# Hold Time OE# High Setup Time OE# High Hold Time CE# Pulse Width WE# Pulse Width WE# Pulse Width High CE# Pulse Width High Data Setup Time Data Hold Time Software ID Access and Exit Time Sector-Erase Block-Erase Chip-Erase Min 0 50 0 0 0 10 50 50 30 30 50 0 Max 40 Units s ns ns ns ns ns ns ns ns ns ns ns ns 150 50 50 200 ns ms ms ms T13.0 1344 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 11 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet TRC TAA ADDRESS AMS-0 TCE CE# TOE OE# VIH WE# TCLZ DQ15-0 HIGH-Z TOH TCHZ HIGH-Z TOLZ TOHZ DATA VALID DATA VALID 1344 F03.0 Note: AMS = Most significant address AMS = A18 for SST39WF800B FIGURE 4: Read Cycle Timing Diagram INTERNAL PROGRAM OPERATION STARTS TBP ADDRESS AMS-0 5555 TAH TWP WE# TAS OE# TCH CE# TCS DQ15-0 XXAA SW0 XX55 SW1 XXA0 SW2 DATA WORD (ADDR/DATA) 1344 F04.0 2AAA 5555 ADDR TDH TWPH TDS Note: AMS = Most significant address AMS = A18 for SST39WF800B X can be VIL or VIH, but no other value. FIGURE 5: WE# Controlled Program Cycle Timing Diagram (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 12 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet INTERNAL PROGRAM OPERATION STARTS TBP ADDRESS AMS-0 5555 TAH TCP CE# TAS OE# TCH WE# TCS DQ15-0 XXAA SW0 XX55 SW1 XXA0 SW2 DATA WORD (ADDR/DATA) 1344 F05.0 2AAA 5555 ADDR TDH TCPH TDS Note: AMS = Most significant address AMS = A18 for SST39WF800B X can be VIL or VIH, but no other value. FIGURE 6: CE# Controlled Program Cycle Timing Diagram ADDRESS AMS-0 TCE CE# TOEH OE# TOE WE# TOES DQ7 DATA DATA# DATA# DATA 1344 F06.0 Note: AMS = Most significant address AMS = A18 for SST39WF800B FIGURE 7: Data# Polling Timing Diagram (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 13 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet ADDRESS AMS-0 TCE CE# TOEH OE# TOE TOES WE# DQ6 TWO READ CYCLES WITH SAME OUTPUTS 1344 F07.0 Note: AMS = Most significant address AMS = A18 for SST39WF800B FIGURE 0-1: Toggle Bit Timing Diagram SIX-BYTE CODE FOR CHIP-ERASE 5555 2AAA 5555 5555 2AAA 5555 TSCE ADDRESS AMS-0 CE# OE# TWP WE# DQ15-0 XXAA SW0 XX55 SW1 XX80 SW2 XXAA SW3 XX55 SW4 XX10 SW5 1344 F08.0 Note: This device also supports CE# controlled Chip-Erase operation The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) AMS = Most significant address AMS = A18 for SST39WF800B X can be VIL or VIH, but no other value. FIGURE 8: WE# Controlled Chip-Erase Timing Diagram (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 14 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet SIX-BYTE CODE FOR BLOCK-ERASE 5555 2AAA 5555 5555 2AAA BAX TBE ADDRESS AMS-0 CE# OE# TWP WE# DQ15-0 XXAA SW0 XX55 SW1 XX80 SW2 XXAA SW3 XX55 SW4 XX50 SW5 1344 F09.0 Note: This device also supports CE# controlled Block-Erase operation The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) AMS = Most significant address AMS = A18 for SST39WF800B X can be VIL or VIH, but no other value. FIGURE 9: WE# Controlled Block-Erase Timing Diagram SIX-BYTE CODE FOR SECTOR-ERASE 5555 2AAA 5555 5555 2AAA SAX TSE ADDRESS AMS-0 CE# OE# TWP WE# DQ15-0 XXAA SW0 XX55 SW1 XX80 SW2 XXAA SW3 XX55 SW4 XX30 SW5 1344 F10.0 Note: This device also supports CE# controlled Sector-Erase operation The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) AMS = Most significant address AMS = A18 for SST39WF800B X can be VIL or VIH, but no other value. FIGURE 10: WE# Controlled Sector-Erase Timing Diagram (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 15 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A14-0 5555 2AAA 5555 0000 0001 CE# OE# TWP WE# TWPH DQ15-0 XXAA SW0 XX55 SW1 XX90 SW2 TAA 00BF Device ID 1344 F11.0 TIDA Note: Device ID = 273FH for SST39WF800B X can be VIL or VIH, but no other value. FIGURE 11: Software ID Entry and Read THREE-BYTE SEQUENCE FOR SST CFI QUERY ENTRY ADDRESS A14-0 5555 2AAA 5555 CE# OE# TWP WE# TWPH DQ15-0 XXAA SW0 XX55 SW1 XX98 SW2 1344 F12.0 TIDA TAA Note: X can be VIL or VIH, but no other value. FIGURE 12: SST CFI Query Entry and Read (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 16 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET ADDRESS A14-0 5555 2AAA 5555 DQ15-0 XXAA XX55 XXF0 TIDA CE# OE# TWP TWHP WE# SW0 SW1 SW2 1344 F13.0 Note: X can be VIL or VIH, but no other value. FIGURE 13: Software ID Exit/CFI Exit (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 17 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet VIHT INPUT VIT REFERENCE POINTS VOT OUTPUT VILT 1344 F14.0 AC test inputs are driven at VIHT (VDD) for a logic `1' and VILT (VSS) for a logic `0'. Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times are (10% 90%) <5 ns. Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test FIGURE 14: AC Input/Output Reference Waveforms VDD TO TESTER 25K TO DUT CL 25K 1344 F15.0 FIGURE 15: A Test Load Example (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 18 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet Start Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XXA0H Address: 5555H Load Word Address/Word Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed Note: X can be VIL or VIH, but no other value. 1344 F16.0 FIGURE 16: Word-Program Algorithm (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 19 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet Internal Timer Program/Erase Initiated Toggle Bit Program/Erase Initiated Data# Polling Program/Erase Initiated Wait TBP, TSCE, TSE or TBE Read word Read DQ7 Program/Erase Completed Read same word No Is DQ7 = true data? Yes No Does DQ6 match? Yes Program/Erase Completed Program/Erase Completed 1344 F17.0 FIGURE 17: Wait Options (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 20 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet CFI Query Entry Command Sequence Software ID Entry Command Sequence Software ID Exit/CFI Exit Command Sequence Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXF0H Address: XXH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Wait TIDA Load data: XX98H Address: 5555H Load data: XX90H Address: 5555H Load data: XXF0H Address: 5555H Return to normal operation Wait TIDA Wait TIDA Wait TIDA Read CFI data Read Software ID Return to normal operation Note: X can be VIL or VIH, but no other value. 1344 F18.0 FIGURE 18: Software ID/CFI Command Flowcharts (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 21 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet Chip-Erase Command Sequence Load data: XXAAH Address: 5555H Sector-Erase Command Sequence Load data: XXAAH Address: 5555H Block-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XX80H Address: 5555H Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX10H Address: 5555H Load data: XX30H Address: SAX Load data: XX50H Address: BAX Wait TSCE Wait TSE Wait TBE Chip erased to FFFFH Sector erased to FFFFH Block erased to FFFFH Note: X can be VIL or VIH, but no other value. 1344 F19.0 FIGURE 19: Erase Command Sequence (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 22 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet PRODUCT ORDERING INFORMATION SST 39 WF 800B XX XX XXXX 70 XX 4C XX - B3K - XXX E X Environmental Attribute E1 = non-Pb Package Modifier K = 48 balls Q = 48 balls (66 possible positions) Package Type B3 = TFBGA (0.8mm pitch, 6mm x 8mm) M2 = WFBGA (0.5mm pitch, 5mm x 6mm) C2 = XFLGA (0.5mm pitch, 5mm x 6mm) MB = WFBGA (0.5mm pitch, 5mm x 6mm) Temperature Range C = Commercial = 0C to +70C I = Industrial = -40C to +85C Minimum Endurance 4 = 10,000 cycles Read Access Speed 70 = 70 ns Device Density 800 = 8 Mbit Voltage W = 1.65-1.95V Product Series 39 = Multi-Purpose Flash 1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST39WF800B SST39WF800B-70-4C-B3KE SST39WF800B-70-4I-B3KE SST39WF800B-70-4C-M2QE SST39WF800B-70-4I-M2QE SST39WF800B-70-4C-C2QE SST39WF800B-70-4I-C2QE SST39WF800B-70-4C-MBQE SST39WF800B-70-4I-MBQE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 23 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet PACKAGING DIAGRAMS TOP VIEW 8.00 0.20 BOTTOM VIEW 5.60 0.80 0.45 0.05 (48X) 6 5 4 3 2 1 0.80 ABCDEFGH A1 CORNER HGFEDCBA 4.00 6.00 0.20 6 5 4 3 2 1 SIDE VIEW 1.10 0.10 A1 CORNER SEATING PLANE 0.35 0.05 0.12 1mm Note: 1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.12 mm 4. Ball opening size is 0.38 mm ( 0.05 mm) 48-tfbga-B3K-6x8-450mic-4 FIGURE 20: 48-Ball Thin-Profile, Fine-Pitch Ball Grid Array (TFBGA) 6mm x 8mm SST Package Code: B3K TOP VIEW 6.00 0.08 BOTTOM VIEW 5.00 0.50 6 5 4 3 2 1 0.29 0.05 (48X) 6 5 4 3 2 1 5.00 0.08 2.50 0.50 ABCDEFGHJKL LKJHGFEDCBA A1 CORNER A1 INDICATOR4 0.52 max. 0.473 nom. DETAIL SIDE VIEW 0.08 SEATING PLANE 0.04 + 0.025/ - 0.015 1mm Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-222, this specific package is not registered. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.08 mm 48-xflga-C2Q-5x6-29mic-NR 4. No bump is present in position A1; a gold-colored indicator is present. FIGURE 21: 48-Ball Extremely Thin-Profile, Fine-Pitch Land Grid Array (XFLGA) 5mm x 6mm SST Package Code: C2Q (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 24 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet TOP VIEW 6.00 0.08 BOTTOM VIEW 5.00 0.50 6 5 4 3 2 1 0.32 0.05 (48X) 6 5 4 3 2 1 5.00 0.08 2.50 0.50 ABCDEFGHJKL LKJHGFEDCBA A1 CORNER A1 INDICATOR4 0.63 0.10 DETAIL SIDE VIEW 0.08 SEATING PLANE 0.20 0.06 Note: 1mm 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-225, this specific package is not registered. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.08 mm 4. No ball is present in position A1; a gold-colored indicator is present. 48-wfbga-M2Q-5x6-32mic-0 5. Ball opening size is 0.29 mm ( 0.05 mm) FIGURE 22: 48-Ball Very-Very-Thin-Profile, Fine-Pitch Ball Grid Array (WFBGA) 5mm x 6mm SST Package Code: M2Q TOP VIEW 6.00 0.08 BOTTOM VIEW 5.00 0.50 6 5 4 3 2 1 0.32 0.05 (48X) 6 5 4 3 2 1 5.00 0.08 2.50 0.50 ABCDEFGHJKL LKJHGFEDCBA A1 CORNER A1 INDICATOR 0.73 max. 0.636 nom. DETAIL SIDE VIEW 0.08 SEATING PLANE 0.20 0.06 Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-225, this specific package is not registered. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.08 mm 4. Ball opening size is 0.29 mm ( 0.05 mm) 1mm 48-wfbga-MBQ-5x6-32mic-0 FIGURE 23: 48-ball Very-very-thin-profile, Fine-pitch Ball Grid Array (WFBGA) 5mm x 6mm SST Package Code MBQ (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 25 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet TABLE 14: Revision History Number 00 Description Date Feb 2007 * Initial release of data sheet Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2007 Silicon Storage Technology, Inc. S71344-00-000 2/07 26 |
Price & Availability of SST39WF800B-70-4I-M2QE
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